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enhancement-mode junction field-effect transistor

См. также в других словарях:

  • enhancement-mode junction field-effect transistor — sandūrinis praturtintosios veikos lauko tranzistorius statusas T sritis radioelektronika atitikmenys: angl. enhancement mode JFET; enhancement mode junction field effect transistor vok. Sperrschicht Feldeffekttransistor des Anreicherungstyps, m… …   Radioelektronikos terminų žodynas

  • Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… …   Wikipedia

  • enhancement-mode JFET — sandūrinis praturtintosios veikos lauko tranzistorius statusas T sritis radioelektronika atitikmenys: angl. enhancement mode JFET; enhancement mode junction field effect transistor vok. Sperrschicht Feldeffekttransistor des Anreicherungstyps, m… …   Radioelektronikos terminų žodynas

  • transistor à effet de champ à jonction p-n à enrichissement — sandūrinis praturtintosios veikos lauko tranzistorius statusas T sritis radioelektronika atitikmenys: angl. enhancement mode JFET; enhancement mode junction field effect transistor vok. Sperrschicht Feldeffekttransistor des Anreicherungstyps, m… …   Radioelektronikos terminų žodynas

  • Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… …   Wikipedia

  • Depletion and enhancement modes — In field effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an ON state or an OFF state at zero gate–source voltage. Enhancement mode MOSFETs are the common …   Wikipedia

  • Insulated-gate bipolar transistor — The insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device, noted for high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, variable speed refrigerators, air… …   Wikipedia

  • Sperrschicht-Feldeffekttransistor des Anreicherungstyps — sandūrinis praturtintosios veikos lauko tranzistorius statusas T sritis radioelektronika atitikmenys: angl. enhancement mode JFET; enhancement mode junction field effect transistor vok. Sperrschicht Feldeffekttransistor des Anreicherungstyps, m… …   Radioelektronikos terminų žodynas

  • sandūrinis praturtintosios veikos lauko tranzistorius — statusas T sritis radioelektronika atitikmenys: angl. enhancement mode JFET; enhancement mode junction field effect transistor vok. Sperrschicht Feldeffekttransistor des Anreicherungstyps, m rus. полевой транзистор с p n переходом, работающий в… …   Radioelektronikos terminų žodynas

  • полевой транзистор с p-n-переходом, работающий в режиме обогащения — sandūrinis praturtintosios veikos lauko tranzistorius statusas T sritis radioelektronika atitikmenys: angl. enhancement mode JFET; enhancement mode junction field effect transistor vok. Sperrschicht Feldeffekttransistor des Anreicherungstyps, m… …   Radioelektronikos terminų žodynas

  • MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

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